Attributes

Key Value
@Ic (A)30m
@VCE (test) (V)10
C(ob) (F)2.0p
CaseTO39
Collector Capacitance (.4 pF
Derate (Amb) (W/?C)4.5m
Forward Current Transfe.25
hfe25
Ic Max. (A)100m
Icbo Max. @Vcb Max. (A)10n
ManufacturerMotorola Semiconductor
Max. Operating Junction.175 ?C
Max. PD (W)680m
Maximum Collector Curre.0.1 A
Maximum Collector Power.0.68 W
Maximum Collector-Base .140 V
Maximum Collector-Emitt.140 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-12
PolarityNPN
SKU85922
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.80M
Transition Frequency (f.40M MHz
TypeTransistor Silicon NPN
Vbr CBO140
Vbr CEO140
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