Attributes

Key Value
@Ic (A)2.0m
@VCE (test) (V)10
C(ob) (F)600f
CaseTO92
Collector Capacitance (.1.2 pF
Derate (Amb) (W/?C)2.8m
Forward Current Transfe.20
hfe20
Ic Max. (A)50m
Icbo Max. @Vcb Max. (A)100n
ManufacturerMotorola Semiconductor
Max. Operating Junction.150 ?C
Max. PD (W)350m
Maximum Collector Curre.0.02 A
Maximum Collector Power.0.35 W
Maximum Collector-Base .30 V
Maximum Collector-Emitt.25 V
Maximum Emitter-Base Vo.3 V
Oper. Temp (?C) Max.140
Pinout Equivalence Numb.3-12
PolarityPNP
SKU552848
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.200M
Transition Frequency (f.300 MHz
TypeTransistor Silicon PNP
Vbr CBO30
Vbr CEO25
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