| @Ic (A) | 1.0m |
| @VCE (test) (V) | 6.0 |
| C(ob) (F) | 2.7p |
| Case | TO92 |
| Collector Capacitance (Cc) | 7 pF |
| Derate (Amb) (W/?C) | 2.5m |
| Forward Current Transfer Ratio (hFE), MIN | 255 |
| hfe | 225 |
| Ic Max. (A) | 50m |
| Icbo Max. @Vcb Max. (A) | 50n |
| Manufacturer | NEC |
| Max. Operating Junction Temperature (Tj) | 180 ?C |
| Max. PD (W) | 250m |
| Maximum Collector Current |Ic max| | 0.1 A |
| Maximum Collector Power Dissipation (Pc) | 0.25 W |
| Maximum Collector-Base Voltage |Vcb| | 100 V |
| Maximum Collector-Emitter Voltage |Vce| | 80 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Oper. Temp (?C) Max. | 125 |
| Pinout Equivalence Number | 3-10 |
| Polarity | NPN |
| SKU | 557821 |
| Surface Mounted Yes/No | NO |
| Trans. Freq (Hz) Min. | 100M |
| Transition Frequency (ft): | 50 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO | 100 |
| Vbr CEO | 80 |