Attributes

Key Value
@Ic (test) (A)30m
@VCE (V)10
CaseTO202
Collector Capacitance (.30 pF
Derate Above 25?C80m
EAN5052406836597
Forward Current Transfe.40
Ic Max. (A)500m
Icbo Max. @Vcb Max. (A)200n
ManufacturerNew Jersey Semiconductor
Max. hFE180
Max. Operating Junction.150 ?C
Max. PD (W)10
Maximum Collector Curre.0.5 A
Maximum Collector Power.2 W
Maximum Collector-Base .300 V
Maximum Collector-Emitt.300 V
Maximum Emitter-Base Vo.6 V
Min hFE40
Oper. Temp (?C) Max.140
Pinout Equivalence Numb.3-10
PolarityNPN
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.45M
Transition Frequency (f.45 MHz
TypeTransistor Silicon NPN
Vbr CBO300
Vbr CEO300
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