| Key | Value |
|---|---|
| Case | DFN2020MD-6, |
| Drain current | -4.5A |
| Drain-source voltage | -20V |
| Features of semiconductor devices | ESD protected gate |
| Gate charge | 45nC |
| Gate-source voltage | ?12V |
| Kind of channel | enhanced |
| Kind of package | reel, |
| Manufacturer | NEXPERIA |
| Mounting | SMD |
| On-state resistance | 33m? |
| Polarisation | unipolar |
| Pulsed drain current | -30A |
| Technology | Trench |
| Type of transistor | P-MOSFET |