| Key | Value |
|---|---|
| Case | DFN1006-3, |
| Drain current | 480mA |
| Drain-source voltage | 30V |
| Features of semiconductor devices | ESD protected gate |
| Gate charge | 890pC |
| Gate-source voltage | ?8V |
| Kind of channel | enhanced |
| Kind of package | reel, |
| Manufacturer | NEXPERIA |
| Mounting | SMD |
| On-state resistance | 1.5? |
| Polarisation | unipolar |
| Power dissipation | 350mW |
| Pulsed drain current | 1.8A |
| Technology | Trench |
| Type of transistor | N-MOSFET |