| Avalanche Energy Rating (Eas) | 162 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (ID) | 100 A |
| Drain-source On Resistance-Max | 3.3 m? |
| DS Breakdown Voltage-Min | 40 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MO-235 |
| JESD-30 Code | R-PSSO-G4 |
| JESD-609 Code | e3 |
| Manufacturer | Nexperia |
| Manufacturer Part Number | PSMN3R3-40YS |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Description | SMALL OUTLINE, R-PSSO-G4 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Packaging | - |
| Polarity/Channel Type | N-CHANNEL |