Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.90A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .54.8 nC @ 10 V
Input Capacitance (Ciss.3470 pF @ 25 V
MfrNexperia USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusObsolete
Power Dissipation (Max)128W (Tc)
Rds On (Max) @ Id, Vgs5.2mOhm @ 15A, 10V
SeriesAutomotive, AEC-Q101, T.
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id2.8V @ 1mA
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