Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.61.8A (Ta)
Drain to Source Voltage.55 V
Drive Voltage (Max Rds .5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .32 nC @ 5 V
Input Capacitance (Ciss.2880 pF @ 25 V
MfrNexperia USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseSC-100, SOT-669
Power Dissipation (Max)106W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs11mOhm @ 20A, 10V
Series-
Supplier Device PackageLFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?15V
Vgs(th) (Max) @ Id2.15V @ 1mA
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