Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.260mA (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .2.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .0.6 nC @ 10 V
Input Capacitance (Ciss.15 pF @ 30 V
MfrNexperia USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case3-XFDFN
Part StatusActive
Power Dissipation (Max)360mW (Ta), 2.3W (Tc)
Rds On (Max) @ Id, Vgs4.2Ohm @ 190mA, 10V
Series-
Supplier Device PackageDFN0606-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id1.5V @ 250?A
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