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Nexperia USA Inc. PH3120L,115
manufacturer:

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C100A (Tc)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs48.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4457 pF @ 10 V
MfrNexperia USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSC-100, SOT-669
Part StatusObsolete
Power Dissipation (Max)62.5W (Tc)
Rds On (Max) @ Id, Vgs2.65mOhm @ 25A, 10V
SeriesTrenchMOS?
Supplier Device PackageLFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 1mA