Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8.8A (Tc)
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .13.3 nC @ 10 V
Input Capacitance (Ciss.657 pF @ 30 V
MfrNexperia USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-VDFN Exposed Pad
Part StatusObsolete
Power Dissipation (Max)50W (Tc)
Rds On (Max) @ Id, Vgs294mOhm @ 2.6A, 10V
SeriesTrenchMOS?
Supplier Device PackageDFN3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 1mA
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