Attributes

Key Value
Base Product NumberPMV65
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2.8A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .9 nC @ 4.5 V
Input Capacitance (Ciss.618 pF @ 10 V
MfrNexperia USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Power Dissipation (Max)480mW (Ta), 6.25W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs78mOhm @ 2.8A, 4.5V
Series-
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id1.25V @ 250?A
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