Nexperia USA Inc. PSMN1R6-30MLHX

mpnPSMN1R6-30MLHX
brandname: Nexperia USA Inc.
manufacturername: Nexperia USA Inc.

Attributes

Key	Value
Base Product Number	PSMN1R6
Category	Discrete Semiconductor .
Current - Continuous Dr.	160A (Ta)
Drain to Source Voltage.	30V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	41nC @ 10V
Input Capacitance (Ciss.	2.369nF @ 15V
Mfr	Nexperia USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	SOT-1210, 8-LFPAK33
Part Status	Active
Power Dissipation (Max)	106W (Ta)
Rds On (Max) @ Id, Vgs	1.9mOhm @ 25A, 10V
Series	-
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.2V @ 1mA