Attributes

Key Value
Base Product NumberPSMN5
CategoryDiscrete Semiconductor .
Current - Continuous Dr.115A (Ta)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .7V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .95 nC @ 10 V
Input Capacitance (Ciss.6238 pF @ 50 V
MfrNexperia USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseSC-100, SOT-669
Power Dissipation (Max)238W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs5.5mOhm @ 25A, 10V
Series-
Supplier Device PackageLFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 1mA
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