Attributes

Key Value
@Ic (A)1.0m
@VCE (test) (V)10
C(ob) (F)300f
CaseTO92
Collector Capacitance (.0.3 pF
Derate (Amb) (W/?C)2.8m
EAN5052406836481
Forward Current Transfe.36
hfe35
Ic Max. (A)25m
Icbo Max. @Vcb Max. (A)100n
ManufacturerNXP Semiconductors
Max. Operating Junction.160 ?C
Max. PD (W)250m
Maximum Collector Curre.0.025 A
Maximum Collector Power.0.3 W
Maximum Collector-Base .40 V
Maximum Collector-Emitt.40 V
Maximum Emitter-Base Vo.4 V
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-16
PolarityNPN
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.400M
Transition Frequency (f.200 MHz
TypeTransistor Silicon NPN
Vbr CBO40
Vbr CEO40
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