Attributes

Key Value
@Ic (test) (A)30m
@VCE (V)10
CaseTO39
Collector Capacitance (.6 pF
Derate Above 25?C40m
Forward Current Transfe.20
Ic Max. (A)100m
Icbo Max. @Vcb Max. (A)100u+
ManufacturerNXP Semiconductors
Max. hFE60
Max. Operating Junction.200 ?C
Max. PD (W)3.0
Maximum Collector Curre.0.1 A
Maximum Collector Power.0.8 W
Maximum Collector-Base .250 V
Maximum Collector-Emitt.200 V
Maximum Emitter-Base Vo.5 V
Min hFE20
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-12
PolarityNPN
SKU79877
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.130M
Transition Frequency (f.80 MHz
TypeTransistor Silicon NPN
Vbr CBO300
Vbr CEO225
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