Attributes

Key Value
@Ic (test) (A)100m
@VCE (V)5.0
CaseTO3P
Collector Capacitance (.145 pF
Forward Current Transfe.5
Ic Max. (A)12
Icbo Max. @Vcb Max. (A)2.0m
ManufacturerNXP Semiconductors
Max. hFE26
Max. Operating Junction.150 ?C
Max. PD (W)125
Maximum Collector Curre.12 A
Maximum Collector Power.125 W
Maximum Collector-Base .1500 V
Maximum Collector-Emitt.800 V
Maximum Emitter-Base Vo.5 V
Min hFE6
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-15
PolarityNPN
SKU84909
Surface Mounted Yes/NoNO
t(f) Max. (S)350n
TypeTransistor Silicon NPN
Vbr CEO800
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