| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 74A (Ta) |
| Drain to Source Voltage (Vdss) | 75 V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5251 pF @ 25 V |
| Mfr | NXP Semiconductors |
| Mounting Type | Surface Mount |
| Operating Temperature | -55?C ~ 175?C (TJ) |
| Package | Bulk |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Power Dissipation (Max) | 158W (Ta) |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 25A, 10V |
| Series | Automotive, AEC-Q101, TrenchMOS? |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ?16V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |