NXP USA Inc. BUK654R6-55C,127

mpnBUK654R6-55C,127
brandname: NXP USA Inc.
manufacturername: NXP USA Inc.

Attributes

Key	Value
Base Product Number	BUK65
Category	Discrete Semiconductor .
Current - Continuous Dr.	100A (Tc)
Drain to Source Voltage.	55 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	124 nC @ 10 V
Input Capacitance (Ciss.	7750 pF @ 25 V
Mfr	NXP USA Inc.
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	204W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	5.4mOhm @ 25A, 10V
Series	TrenchMOS?
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?16V
Vgs(th) (Max) @ Id	2.8V @ 1mA