| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 63A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4373 pF @ 25 V |
| Mfr | NXP USA Inc. |
| Mounting Type | Through Hole |
| Operating Temperature | -55?C ~ 175?C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Part Status | Active |
| Power Dissipation (Max) | 200W (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 25A, 10V |
| Series | TrenchMOS? |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ?20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |