NEXPERIA BUK7Y113-100EX

B08X18HQ2R

Nexperia Mosfet Transistor, N Channel, 12 A, 100 V, 0.08 Ohm, 10 V, 3 V Rohs Compliant: Yes - BUK7Y113-100EX

Nexperia Mosfet Transistor, N Channel, 12 A, 100 V, 0.08 Ohm, 10 V, 3 V Rohs Compliant: Yes - BUK7Y113-100EXzoom

Attributes

Key Value
Applicationautomotive industry
CaseLFPAK56,
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Tc)
Drain current8.5A
Drain to Source Voltage.100 V
Drain-source voltage100V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate charge10.4nC
Gate Charge (Qg) (Max) .10.4 nC @ 10 V
Gate-source voltage?20V
Input Capacitance (Ciss.601 pF @ 25 V
Kind of channelenhanced
Kind of packagereel,
ManufacturerNEXPERIA
MfrNXP USA Inc.
MountingSMD
Mounting TypeSurface Mount
On-state resistance313m?
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseSC-100, SOT-669
Polarisationunipolar
Power dissipation45W
Power Dissipation (Max)45W (Tc)
Product StatusActive
Pulsed drain current48A
Rds On (Max) @ Id, Vgs113mOhm @ 5A, 10V
SeriesTrenchMOS?
Supplier Device PackageLFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Type of transistorN-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 1mA

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
AvnetBUK7Y113-100EX0.188481500602NXP Semiconductors0.18848 @ 1500
Digi-Key134750620.1918811881191010555NXP USA Inc.0.191881188119 @ 1010
Future ElectronicsC0188645770.19924500602Nexperia0.1992 @ 4500
TMEBUK7Y113-100EX0.7961125NEXPERIA0.796 @ 1
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