NXP USA Inc. BUK9E3R2-40E,127

mpnBUK9E3R2-40E,127
brandname: NXP USA Inc.
manufacturername: NXP USA Inc.

Attributes

Key	Value
Base Product Number	BUK9
Category	Discrete Semiconductor .
Current - Continuous Dr.	100A (Tc)
Drain to Source Voltage.	40 V
Drive Voltage (Max Rds .	5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	69.5 nC @ 5 V
Input Capacitance (Ciss.	9150 pF @ 25 V
Mfr	NXP USA Inc.
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-262-3 Long Leads, I?.
Power Dissipation (Max)	234W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	2.8mOhm @ 25A, 10V
Series	TrenchMOS?
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?10V
Vgs(th) (Max) @ Id	2.1V @ 1mA