NXP USA Inc. PH3330L,115

mpnPH3330L,115
brandname: NXP USA Inc.
manufacturername: NXP USA Inc.

Attributes

Key	Value
Base Product Number	PH33
Category	Discrete Semiconductor .
Current - Continuous Dr.	100A (Tc)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	30.5 nC @ 4.5 V
Input Capacitance (Ciss.	4840 pF @ 12 V
Mfr	NXP USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	SC-100, SOT-669
Part Status	Obsolete
Power Dissipation (Max)	62.5W (Tc)
Rds On (Max) @ Id, Vgs	3.3mOhm @ 25A, 10V
Series	TrenchMOS?
Supplier Device Package	LFPAK56, Power-SO8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.15V @ 1mA