NXP USA Inc. PHT6N06T,135

mpnPHT6N06T,135
brandname: NXP USA Inc.
manufacturername: NXP USA Inc.

Attributes

Key	Value
Base Product Number	PHT6
Category	Discrete Semiconductor .
Current - Continuous Dr.	5.5A (Tc)
Drain to Source Voltage.	55 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	5.6 nC @ 10 V
Input Capacitance (Ciss.	175 pF @ 25 V
Mfr	NXP USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-261-4, TO-261AA
Power Dissipation (Max)	8.3W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	150mOhm @ 5A, 10V
Series	TrenchMOS?
Supplier Device Package	SC-73
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 1mA