Attributes

Key Value
Base Product NumberPHX45
CategoryDiscrete Semiconductor .
Current - Continuous Dr.30.4A (Tc)
Drain to Source Voltage.110 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .61 nC @ 10 V
Input Capacitance (Ciss.2600 pF @ 25 V
MfrNXP USA Inc.
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack, Iso.
Power Dissipation (Max)62.5W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs25mOhm @ 25A, 10V
SeriesTrenchMOS?
Supplier Device PackageTO-220F
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 1mA
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