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NXP USA Inc. PSMN5R0-100XS,127
manufacturer:
Description:
N-Channel 100 V 67.5A (Tc) 63.8W (Tc) Through Hole TO-220F

Attributes

Key ^Value
Base Product NumberPSMN5
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C67.5A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature, Operating Temperature, Series-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9900 pF @ 50 V
MfrNXP USA Inc.
Mounting TypeThrough Hole
PackageTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)63.8W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs5mOhm @ 15A, 10V
Supplier Device PackageTO-220F
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 1mA