| Alternate Part No. | 863-2N6109G |
| Alternate Parts, Base Part Number, Series | 2N6109 |
| Brand, Manufacturer | ON Semiconductor |
| Case | TO220 |
| Collector Capacitance (Cc) | 250 pF |
| Collector Emitter Saturation Voltage, Collector-Emitter Saturation Voltage | 3.5 V |
| Collector- Base Voltage VCBO, Maximum Collector-Base Voltage |Vcb| | 60 V |
| Collector- Emitter Voltage VCEO Max, Maximum Collector-Emitter Voltage |Vce| | 50 V |
| Configuration | Single |
| Continuous Collector Current, Maximum Collector Current |Ic max|, Maximum DC Collector Current | 7 A |
| Current - Collector (Ic) (Max) | 7A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Collector/Base Gain hfe Min, DC Collector/Base Gain hFE Min, Forward Current Transfer Ratio (hFE), MIN | 30 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2.5A, 4V |
| Emitter Base Voltage VEBO, Emitter- Base Voltage VEBO, Maximum Emitter-Base Voltage |Veb| | 5 V |
| Factory Pack Quantity, Standard Package | 50 |
| Frequency - Transition | 10MHz |
| Gain Bandwidth Product fT | 10 MHz |
| In-stock | 30000 |
| Lead Free Status / RoHS Status | RoHS Compliant |
| Manufacturer Part No., Manufacturer Part Number | 2N6109G |
| Manufacturer Standard Lead Time | 2 Weeks |
| Max. Operating Junction Temperature (Tj) | 150 ?C |
| Maximum Collector Power Dissipation (Pc), Maximum Power Dissipation | 40 W |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 65 C |
| Mounting Style, Mounting Type | Through Hole |
| Operating Temperature | -65 |
| Package / Case, Package/Case | TO-220-3 |
| Packaging | Tube |
| Polarity, Transistor Polarity, Transistor Type | PNP |
| Power - Max | 40W |
| Product Categories | Bipolar Transistors |
| Product Category | Transistors Bipolar - BJT |
| RoHs Status | Rohs |
| SKU | 390376 |
| Supplier Device Package | TO-220AB |
| Transition Frequency (ft): | 4 MHz |
| Type | Transistor Silicon PNP |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 3A, 7A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |