Attributes

Key Value
Base Product NumberFDB13AN06
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10.9A (Ta), 62A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .29 nC @ 10 V
Input Capacitance (Ciss.1350 pF @ 25 V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)115W (Tc)
Rds On (Max) @ Id, Vgs13.5mOhm @ 62A, 10V
SeriesPowerTrench?
Supplier Device PackageD?PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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