Attributes

Key Value
Base Product NumberFDMA910
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9.4A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .29 nC @ 4.5 V
Input Capacitance (Ciss.2805 pF @ 10 V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case6-VDFN Exposed Pad
Part StatusActive
Power Dissipation (Max)2.4W (Ta)
Rds On (Max) @ Id, Vgs20mOhm @ 9.4A, 4.5V
SeriesPowerTrench?
Supplier Device Package6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1.5V @ 250?A
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