ON Semiconductor MMBT6427LT1G

mpnMMBT6427LT1G
brandname: ON Semiconductor
manufacturername: ON Semiconductor

Attributes

Key	Value
Collector Cutoff Current	1 ?A
Collector to Base Volta.	40 V
Collector to Emitter Vo.	40 V
Configuration	Common Base
Continuous Collector Cu.	500 mA
Dimensions	3.04 x 2.64 x 1.11 mm
Emitter to Base Voltage	12 V
Height	0.044" (1.11mm)
Input Capacitance	15 pF
Input Voltage	12 V
Length	0.119 in
Maximum Operating Tempe.	+150 ?C
Minimum Operating Tempe.	-55 ?C
Mounting Type	Surface Mount
Number of Elements per .	2
Number of Pins	3
Output Current	0.5 A
Output Voltage	40 VDC
Package Type	SOT-23
Polarity	NPN
Power Dissipation	300 mW
Primary Type	Si
Product Header	Darlington Silicon Tran.
Resistance, Thermal, Ju.	556 ?C/W
Series	Transistor Series
Temperature Operating R.	-55 to +150 ?C
Transistor Type	NPN
Type	Small Signal
Voltage, Collector to E.	1.5 V
Voltage, Saturation, Ba.	2 V
Width	0 in