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ON Semiconductor NTD4857N-1G
ON Semiconductorzoom
manufacturer:

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C12A (Ta), 78A (Tc)
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET Feature, Series-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1960 pF @ 12 V
MfrON Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Part StatusObsolete
Power Dissipation (Max)1.31W (Ta), 56.6W (Tc)
Rds On (Max) @ Id, Vgs5.7mOhm @ 30A, 10V
Supplier Device PackageI-PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A