Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10.4A (Ta), 65A (Tc)
Drain to Source Voltage.25 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .21.8 nC @ 10 V
Input Capacitance (Ciss.1308 pF @ 12 V
MfrON Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-251-3 Stub Leads, IP.
Part StatusObsolete
Power Dissipation (Max)1.28W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs7.5mOhm @ 30A, 10V
Series-
Supplier Device PackageI-PAK
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250?A
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