ON Semiconductor NTMFS4H02NFT1G

mpnNTMFS4H02NFT1G
brandname: ON Semiconductor
manufacturername: ON Semiconductor

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	37A (Ta), 193A (Tc)
Drain to Source Voltage.	25 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	40.9 nC @ 10 V
Input Capacitance (Ciss.	2652 pF @ 12 V
Mfr	ON Semiconductor
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerTDFN
Part Status	Active
Power Dissipation (Max)	3.13W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs	1.4mOhm @ 30A, 10V
Series	-
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.1V @ 250?A