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ONSEMI BAV19TR
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manufacturer:
Description:
ONSEMI BAV19TR | Diode: switching; THT; 120V; 200mA; Ifsm: 4A; DO35; Ufmax: 1.25V; 50n

Attributes

Key ^Value
Capacitance5pF
CaseDO35
Leakage current100?A
Load current200mA
ManufacturerONSEMI
Max. forward impulse current4A
Max. forward voltage1.25V
Max. off-state voltage120V
MountingTHT
Power dissipation500mW
Reverse recovery time50ns
Semiconductor structuresingle diode
Type of diodeswitching