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onsemi BC337_J35Z
brand:
manufacturer:
Description:
Bipolar (BJT) Transistor NPN 45 V 800 mA 100MHz 625 mW Through Hole TO-92-3

Attributes

Key ^Value
Base Product NumberBC337
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)800 mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V
Frequency - Transition100MHz
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max625 mW
Product StatusObsolete
Series-
Supplier Device PackageTO-92-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)45 V