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onsemi BD679AG
brand:
manufacturer:
Description:
Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Through Hole TO-126

Attributes

Key ^Value
Base Product NumberBD679
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)4 A
Current - Collector Cutoff (Max)500?A
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A, 3V
Frequency - Transition, Series-
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-225AA, TO-126-3
Power - Max40 W
Product StatusObsolete
Supplier Device PackageTO-126
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic2.8V @ 40mA, 2A
Voltage - Collector Emitter Breakdown (Max)80 V