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onsemi BDV64BG
brand:
manufacturer:
Description:
Bipolar (BJT) Transistor PNP - Darlington 100 V 10 A 125 W Through Hole TO-247-3

Attributes

Key ^Value
Base Product NumberBDV64
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)10 A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 4V
Frequency - Transition, Series-
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-65?C ~ 150?C (TJ)
PackageTube
Package / Case, Supplier Device PackageTO-247-3
Power - Max125 W
Product StatusActive
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic2V @ 20mA, 5A
Voltage - Collector Emitter Breakdown (Max)100 V