Key ^ | Value |
---|---|
Case | TO3PN |
Drain current | 29.7A |
Drain-source voltage | 600V |
Gate charge | 270nC |
Gate-source voltage | ?30V |
Kind of channel | enhanced |
Kind of package | tube |
Manufacturer | ONSEMI |
Mounting | THT |
On-state resistance | 70m? |
Polarisation | unipolar |
Power dissipation | 417W |
Pulsed drain current | 141A |
Technology | SuperFET? |
Type of transistor | N-MOSFET |