Attributes

Key Value
Base Product NumberFDBL86361
CategoryDiscrete Semiconductor .
Current - Continuous Dr.300A (Tc)
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .188 nC @ 10 V
Input Capacitance (Ciss.12800 pF @ 25 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerSFN
Power Dissipation (Max)429W (Tj)
Product StatusActive
Rds On (Max) @ Id, Vgs1.4mOhm @ 80A, 10V
SeriesAutomotive, AEC-Q101, P.
Supplier Device Package8-HPSOF
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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