Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.5A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .14 nC @ 4.5 V
Input Capacitance (Ciss.1160 pF @ 10 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max)1.6W (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs48mOhm @ 4.5A, 4.5V
SeriesPowerTrench?
Supplier Device PackageSuperSOT?-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1.5V @ 250?A
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