Attributes

Key Value
Base Product NumberFDD863
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Ta), 37A (Tc)
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .19 nC @ 10 V
Input Capacitance (Ciss.1035 pF @ 50 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)3.1W (Ta), 62W (Tc)
Rds On (Max) @ Id, Vgs23mOhm @ 8A, 10V
SeriesPowerTrench?
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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