Attributes

Key Value
Base Product NumberFDD86367
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100A (Tc)
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .88 nC @ 10 V
Input Capacitance (Ciss.4840 pF @ 40 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)227W (Tj)
Product StatusActive
Rds On (Max) @ Id, Vgs4.2mOhm @ 80A, 10V
SeriesAutomotive, AEC-Q101, P.
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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