Attributes

Key Value
Base Product NumberFDD8647
CategoryDiscrete Semiconductor .
Current - Continuous Dr.14A (Ta), 42A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .28 nC @ 10 V
Input Capacitance (Ciss.1640 pF @ 20 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)3.1W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 13A, 10V
SeriesPowerTrench?
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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