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Description:
ONSEMI FDG312P | Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.75W; SC70-
Attributes
| Key ^ | Value |
|---|---|
| Case | SC70-6 |
| Drain current | -1.2A |
| Drain-source voltage | -20V |
| Gate charge | 5nC |
| Gate-source voltage | ?8V |
| Kind of channel | enhanced |
| Kind of package | reel, |
| Manufacturer | ONSEMI |
| Mounting | SMD |
| On-state resistance | 0.29? |
| Polarisation | unipolar |
| Power dissipation | 0.75W |
| Technology | PowerTrench? |
| Type of transistor | P-MOSFET |