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onsemi FDP027N08B-F102
brand:
manufacturer:
Description:
N-Channel 80 V 120A (Tc) 246W (Tc) Through Hole TO-220-3

Attributes

Key ^Value
Base Product NumberFDP027
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C120A (Tc)
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13530 pF @ 40 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / Case, Supplier Device PackageTO-220-3
Power Dissipation (Max)246W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs2.7mOhm @ 100A, 10V
SeriesPowerTrench?
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 250?A