Attributes

Key Value
Base Product NumberFDS8858
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8.6A, 7.3A
Drain to Source Voltage.30V
FET FeatureLogic Level Gate
FET TypeN and P-Channel
Gate Charge (Qg) (Max) .24nC @ 10V
Input Capacitance (Ciss.1205pF @ 15V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm .
Power - Max900mW
Product StatusActive
Rds On (Max) @ Id, Vgs17mOhm @ 8.6A, 10V
SeriesPowerTrench?
Supplier Device Package8-SOIC
Vgs(th) (Max) @ Id3V @ 250?A
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