Key ^ | Value |
---|---|
Case | TO247-3 |
Collector current | 40A |
Collector-emitter voltage | 650V |
Features of semiconductor devices | integrated anti-parallel diode |
Gate charge | 120nC |
Gate-emitter voltage | ?20V |
Kind of package | tube |
Manufacturer | ONSEMI |
Mounting | THT |
Power dissipation | 116W |
Pulsed collector current | 120A |
Type of transistor | IGBT |