Attributes

Key Value
Base Product NumberFQA24
CategoryDiscrete Semiconductor .
Current - Continuous Dr.23.5A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .145 nC @ 10 V
Input Capacitance (Ciss.5500 pF @ 25 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-3P-3, SC-65-3
Part StatusActive
Power Dissipation (Max)310W (Tc)
Rds On (Max) @ Id, Vgs240mOhm @ 11.8A, 10V
SeriesQFET?
Supplier Device PackageTO-3PN
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
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