Attributes

Key Value
Base Product NumberFQB22P10
CategoryDiscrete Semiconductor .
Current - Continuous Dr.22A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .50 nC @ 10 V
Input Capacitance (Ciss.1500 pF @ 25 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)3.75W (Ta), 125W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs125mOhm @ 11A, 10V
SeriesQFET?
Supplier Device PackageD?PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
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